Dr. Geoff Taylor writing ebeam gate features on a POET wafer

Dr. Geoff Taylor writing ebeam gate features on a POET wafer

Toronto, Ont., Canada — An exciting new technology leap in semiconductor chip design based on a combination of optics and GaAs promises to change integrated circuits drastically, making them up to 10X to 100X faster than conventional silicon while reducing power consumption 80% — making the development very eco-friendly. Prototypes will be ready for display and testing with third parties by the end of 2014.

The new development comes from POET Technologies (TSX: PTK and OTCQX: POETF), a publicly listed Company and the developer of the “POET” Platform. POET’s head office is in Toronto, ON, Canada, and its research and development lab is in Storrs, CT. POET designs III-V semiconductor devices for military, industrial and commercial applications, including infrared sensor arrays and ultra-low-power random access memory. POET Technologies has several patents issued and pending for the POET process, with potential high speed and power-efficient applications in devices such as servers, tablet computers and smartphones. It has been the company’s mission to provide a valid solution to the ageing designs used in traditional silicon CMOS.

The Company’s name is an acronym for “Planar Opto-Electronic Technology”, a revolutionary III-V process used to monolithically build electrical, optical, and electro-optical integrated circuits. POET supports a full range of electrical and optical active and passive circuit components. POET-based devices have the potential to provide very high performance vs. existing silicon-based devices (up to 100X faster) with very low power consumption, up to 80 percent less than existing silicon devices. The POET process is much more versatile than legacy hybridized fabrication of compound semiconductor devices (GaAs, InP, others) and can be implemented using existing CMOS chip-making equipment.

POET will be fully compatible with existing semiconductor design and manufacturing flows, allowing unprecedented integration of functions that take multiple chipsets today into a single chip for large component cost reduction, and — particularly for optics — tremendous (~80 percent) reduction in assembly and test costs.

This breakthrough has been achieved by turning to strained InGaAs quantum wells with indium concentrations of 70 percent or more; mobility and channel velocity increases, and operation of the circuit at 0.3 V, should enable up to a ten-fold gain in performance and up to 80 percent lower power requirements compared to a silicon-based CMOS IC.

18 Years of R&D
Development of this technology started in the early 1990s in the labs at the University of Connecticut. Since then, more than 18 years have been devoted to developing and proving out numerous components of the platform by POET’s Chief Scientific Officer and Director Dr. Geoff Taylor and his team. POET’s business model is to license the III-V semiconductor process technology IP to customers and foundry partners to enable designs, to produce devices that include analog, digital and optical functions on the same die for a variety of markets including, but not limited to, hand-held smartphones and tablets, PCs, servers, data centers, military and industrial applications.

With this technology, the compatibility issue between transistors and the optical devices disappears, and it is possible to form high mobility channels for both the n-type and p-type transistors. One challenge had been the assumption that these high-mobility materials have to be introduced on a silicon substrate. In our case, we use substrates made of GaAs. These are currently available in diameters up to 200mm, and there is no fundamental barrier to the production of 300mm equivalents which is a commercial foundry standard. Our preferred growth technique for depositing III-V layers on this foundation is molecular beam epitaxy (MBE), and this can be applied to substrates of this size. Tier 1 fabs already use this approach to deposit material on 300mm wafers, so the only barrier to a switch of substrate is cost, not availability of the technology. Differences between the price of silicon and GaAs substrates will shrink as shipments of the latter rise, and costs could be further reduced through innovations in substrate release techniques. The POET fabrication process employs most of the same set of foundry tools currently used for silicon CMOS, so minimal reconfiguration is required.

The idea of using GaAs rather than silicon to make digital circuits is not new. During the nMOS era that spanned the 1970s and early 1980s, GaAs MESFET technology was a contender for silicon E/D logic applications. And later, during the development of CMOS, the GaAs HEMT was also considered for high-speed logic circuits.

The key differences to the present technology are that we are now able to integrate both electronic GaAs devices with optical GaAs devices, and we have substituted optical interconnect to eliminate long metal interconnects.

Furthermore, in contrast to other technologies that are trying to go beyond the silicon CMOS barriers, the POET approach uses conventional fab processes to produce its devices together with MBE wafers, the only epitaxial technique to provide precision doping, thickness control and laser quality.

A significant capability of the technology is that the epitaxial process is unmatched in its ability to realize self-assembled quantum dots. Although not a current objective, it turns out that the modulation-doped interface formed with this technology, which is a normally off channel, is ideal for the implementation of the single-electron transistor. This form of transistor can access engineered quantum dots at the interface, which have quantum levels differentiated by spin. It is possible that these single-electron transistors could aid the development of quantum computing, with electron spin providing the quantum variable to form quantum computing logic blocks.

Moore’s Law Revoked
For almost 50 years, Moore’s Law has dictated the pace of technological change. As the number of transistors on a chip double approximately every 1.5 to 2 years, this increases the performance capabilities of computing devices and the many functions they make possible. Unfortunately, with present silicon-based integrated circuits and manufacturing processes, performance and cost improvements under Moore’s Law are increasingly unsustainable, and will soon come to an end.

These physical limitations will increasingly impede electronics manufacturers from continuing to build smarter, faster, more efficient and cheaper devices — including sensors, lasers and computing devices.

By integrating optics and electronics onto one monolithic chip, POET expects to provide its customers with new direction that is no longer strait-jacketed by the limitations of silicon technology.

See also Compound Semiconductor’s magazine (June 2014, page 52-57). The digital edition can be found directly on Compound Semi’s digital edition page here: http://www.compoundsemiconductor.net/csc/magazine.php.

BRL Test – We absolutely know Agilent network analyzers


E5071A Agilent Network Analyzer 8.5 GHz at On Sale at BRL Test

 Click here for datasheet and online quote request form at BRLTest.com

Call your BRL Test Rep today to see if the E5071A is the right fit for you at 866-275-8378.

The Agilent E5071A provides the comprehensive measurement capability required to test both multiport and balanced devices. The ENA Series offer 2-, 3-, or 4-test ports for simultaneous measurement of all signal paths in these multiport devices.
The ENA series delivers extensive analysis capabilities such as time domain transform with gating and mixed mode S-parameter measurements with matching circuit embedding/de-embedding and impedance conversion. In addition to the built-in Microsoft® Visual Basic for Applications (VBA) capability, the analyzer can be programmed via its COM or SCPI interface.
The ENA Series has a Windows®-based user interface and large 10.4-inch LCD. Built-in interfaces, such as GPIB, 10/100BaseT Ethernet, USB, VGA and parallel also included.


San Francisco, CA — SEMI projects back-to-back years of double-digit growth in worldwide semiconductor equipment sales, according to the mid-year edition of the SEMI Capital Equipment Forecast, released at the annual SEMICON West exposition. The SEMI outlook calls for the total semiconductor equipment market to grow 20.8 percent in 2014 to reach $38.4 billion and to expand another 10.8 percent in 2015 to exceed $42.6 billion.

Following two years of spending declines, key drivers for equipment spending are investments by foundry and logic fabs for sub 20nm technology, NAND flash makers for leading edge technology (including 3D NAND) and capacity, DRAM technology upgrades for mobile applications, and expansion of advanced packaging capacity for flip chip, wafer bumping, and wafer-level packaging. All regions of the world are projected to see equipment spending increases in 2015.

Front-end wafer processing equipment is forecast to grow 11.9 percent in 2015 to $34.8 billion, up from $31.1 billion in 2014. Test equipment and assembly and packaging equipment is forecast to experience growth next year, rising to $3.1 billion (+1.6 percent) and $2.6 billion (+1.2 percent), respectively. The forecast indicates that next year is on track to be the second largest spending year ever, surpassed only by $47.7 billion spent in 2000.

“Mobility and interconnectivity require leading-edge process technologies, both at the fab level and in packaging, and are key factors for growth in equipment spending,” said Denny McGuirk, president and CEO of SEMI. “We expect capital spending to increase throughout the remainder of 2014 and into 2015.”

Growth is forecast in all regions except ROW in 2014 and all regions in 2015. Taiwan is forecast to continue to be the world’s largest spender with $11.6 billion estmated for 2014 and $12.3 billion for 2015. In 2014, North America is second at $7.2 billion, followed by South Korea at $6.9 billion. For 2015, South Korea is in second ($8.0 billion) in spending, followed by North America ($7.3 billion).

In 2014, year-over-year increases are expected to be largest for China (47.3 percent), North America (35.7 percent), South Korea (33.0 percent), and Europe (29.7 percent). Year-over-year percentage increases for 2015 are largest for Europe (47.8 percent increase), ROW (23.5 percent), Japan (15.6 percent), and South Korea (15.0 percent).

Contact: SEMI, 3081 Zanker Rd., San Jose, CA 95134 408-943-6900 fax: 408-943-7914 Web: http://www.semi.org

Happy Friday from BRL Test

Posted: August 8, 2014 in Test Equipment


Call BRL Test at 866-275-8378 or click on the links below to get spec sheets and quote forms.

2250 North Atlantic Digital Analyzing Phase Angle Voltmeter 700Vpk $4,900.00
33250A Agilent / HP Function / Arbitrary Waveform Generator, 80 MHz $3,400.00
4396A /010/1C2/1D5/1D6 Agilent / HP Network Analyzer 1.8GHz $5,900.00
4532 Boonton BTN RF Peak Power Meter, Dual Channel, 10 kHz to 40 GHz $3,800.00
4062UX Agilent / HP Parametric Tester $49,900.00
4072A Agilent / HP Parametric Tester $174,000.00
4072B Agilent / HP Parametric Tester $179,000.00
5720A /03 Multifunction Fluke Calibrator w/ 5725A Amplifier, wide band AC voltage option $39,900.00
71209A Agilent / HP Spectrum Analyzer 26.5 GHz $3,900.00
8160A /020 Agilent / HP Pulse Generators, 50MHz $4,000.00
83640A Agilent / HP Synthesized Sweeper, 10 MHz to 40 GHz $15,000.00
83712B /1E1/1E8/1E9 Agilent / HP Synthesized CW Generator, 10 MHz – 20 GHz $6,900.00
85107B Agilent / HP Network Analyzer System 50 GHz, 8510C 8517B 83651B $19,900.00
85107B Agilent / HP Network Analyzer System 26.5 GHz, 8510C… $14,900.00
8565E-006/008 Agilent / HP 30Hz-50Ghz Spectrum Analyzer $15,900.00
8594E /041 Agilent / HP Portable Spectrum Analyzer 9 kHz – 2.9 GHz $1,990.00
8595E /041/105/140/151/163/J62/J63/J66 Agilent / HP Spectrum Analyzer,9kHz-6.5GHz $2,990.00
8600A LeCroy WaveMaster 6GHz DSO L1/GPIB-1/JTA2/XDEV/XMAP/XMATH SDA-6000A $9,900.00
8665A Agilent / HP Signal Generator, 4.2 GHz $2,900.00
8722ES /10/12/1DS/89/400 Agilent / HP Network Analyzer 40 GHz $25,000.00
8720C Agilent / HP Microwave Network Analyzer, 50 MHz – 20 GHz, 2 Port, Vector $8,400.00
8753D 006/1D5 Agilent / HP Network Analyzer 6GHz $6,900.00
8753D 006/010/1D5 Agilent / HP Network Analyzer 6GHz $7,400.00
8753D-006/010 Agilent / HP Network Analyzer 6GHz $6,900.00
8753ES /006/H16 Agilent / HP Network Analyzer 6GHz $9,400.00
8902A Agilent / HP Measuring Receiver, 150 kHz – 1300 MHz $6,900.00
AB-900 – Com-Power Biconical Antenna New in Box $1,029.00
ABM-6000 Com Power Microwave Biconical Antenna 1-6 GHz New in Box $3,450.00
AH-118 Com-Power Horn Antenna 1-18 GHz New in Box $2,830.00
ALC-100 Com-Power Compact Log Peridic Antenna 300MHz-1GHz New in Box $1,250.00
Bode 100 Vector Network Analyzer 1KHz to 40 MHz New in Box $5,490.00
CMU200 Rohde & Schwarz R&S Universal Radio Communications Tester $2,400.00
DPO4054 Tektronix 500MHz 4CH 2.5GSa/s Digital Phosphor Oscilloscope w/ 4x P6139A $7,900.00
DSO6052A Agilent / HP Oscilloscope 500 MHz, 2* Agilent 10073C $4,300.00
E4440A Agilent Spectrum Analyzer 26.5 GHz $19,900.00
E5515C Agilent Test Set HW 4.3 3/CDMA/CDMA2000/IS-95/AMPS/1xEV-DO $2,400.00
E8241A /H30 Agilent / HP PSG-L Series Signal Generator, 250 kHz – 20 GHz $7,900.00
E8364B Agilent / HP 50 GHz Network Analyzer $59,900.00
E8257D /007/1EA/520/UNU Agilent / HP Analog Signal Generator, 250 kHz – 20 GHz $21,900.00
EPM-442A Agilent / HP Power Meter Dual Channel $2,000.00
FSH18 Rohde and Schwarz R&S Spectrum Analyzer, Hand Held, 10 MHz to 18 GHz $9,900.00
FSIQ7 /K10 R&S Rohde & Schwarz Vector Signal Analyzer, 20Hz-7GHz $5,400.00
J7230A OmniBER Agilent / HP OTN 10 Gb/s Communications Performance Analyzer $6,900.00
J7231B Agilent / HP OmniBER OTN 10G Analyzer w/ Opts: 004/100/108/112/210 $6,900.00
MG3691A 1B/2A/5/9K/15A Anritsu Synthesized CW Generator, 2 to 8.4 GHz $4,400.00
MG3691B Anritsu Signal Generator, 10MHz to 10GHz $5,400.00
MS2721A Anritsu Handheld Spectrum Analyzer $6,900.00
MS4622B Anritsu Vector Network Analyzer 10 MHz – 3 GHz $5,900.00
MSO4034 Tektronix Mixed Signal Oscilloscope 350 MHz, w/ 4 Probes & TEK P6516 $7,900.00
MSO6052A /001/8MH/SEC Agilent / HP Oscilloscope 500 MHz & 2* 10073C Probes $4,900.00
MW9060A Anritsu Optical Time Domaine Reflectometer, OTDR $2,900.00
N5181A /506 Agilent / HP MXG RF Analog Signal Generator, 250 kHz -6 GHz $6,900.00
R11644A Agilent / HP Calibration Kit WR-28 Connector 26.5-40GHz $2,200.00
S820C Anritsu Microwave Site Master Transmission Line and Antenna Analyzer 3.3 GHz- 20 GHz $8,900.00
SML03 Rohde and Schwarz 3.3 GHz Signal Generator $2,900.00
SMY01 / B1 Rohde Schwarz R&S Signal Generator 9 kHz to 1040 MHz $2,000.00
E8257D-520 photo


Click here for an E8257D-520 quote or to view the data sheet.

Click here to see all the different frequency ranges of E8257D.

Call your BRL Test Represtative at 866-275-8378 for sales and repair questions.

Ready to step it up a level or two? Enter the tighter, faster, broader, quieter , sharper, stronger, world of the Agilent E8257D PSG! Great resolution? Yes! High output power? Yes! Broad spectrum? Yes! Low noise? Yes! Accurate? Yes! When you need to take it to the lab level you must have better performance all around. That’s why the E8257D is the proven choice of lab techs worldwide.

The E8257D PSG is a very serious analog signal generator. Choose frequency max up to 67 GHz (operational to 70 GHz). The E8257D PSG high output power and superior level accuracy often does away with the need for an external amplifier for testing high power devices and cuts down on test uncertainty. Great phase noise performance is ideal for local oscillator, low jitter clock substitution and adjacent channel selectivity tests. Professionals choose the E8257D for RF & microwave radar, communications, and control systems testing.

Continuous wave (CW) generation is standard. Optionally add analog and/or pulse modulation to accurately characterize RF and microwave components units. Flexible optional modulation means getting in easy and ramping up when you can afford.

Changing requirements? No problem. Call BRL Test 866-275-8378 and we’ll upgrade you to the right options. Configure the E8257D PSG for applications ranging from LO substitution and distortion test to radar test and interference signal generation.

  • Broad frequency ranges – 250 kHz to 20, 40, 50 or 67 GHz (operational to 70 GHz) with .001 Hz resolution
  • High output power – typical performance of +23 dBm @ 20 GHz, + 17dBm @ 40 GHz, + 14 dBm @ 67 GHz with excellent level accuracy
  • World-class SSB phase noise – typical performance of -115 dBc/Hz at 10 kHz offset from 10 GHz carrier
  • Flexible analog modulation formats – AM, FM, ØM, and pulse
  •  Dual internal function generators – sine, square, triangular, ramp, and noise waveforms
  •  Easy frequency extension – up to 325 GHz with Oleson Microwave Labs (OML) mm-wave modules
  • Narrow pulse modulation – typical 8 ns rise/fall times and 20 ns pulse width from 10 MHz to 67 GHz
  • Multiple high rate sweep modes – digital step/list sweep and analog ramp sweep featuring code compatibility with the Agilent 8757D scalar network analyzer
  • External control using PSA Series spectrum analyzer – scalar network analysis capability when combined with any PSA with external source control option.
  • Backwards compatible – same form factor and 100% code compatible with previous generations of PSG signal generators
  • Standard 1 year warranty



Happy Humpday!

Happy Humpday!



4062UX Parametric Tester

4062UX Parametric Tester on sale at BRL Test

Configured your way.
Expert on-site installation.
Bam! You’re up and running fast.
No headaches.
No worries.

BRL Test - get everything you want exept the big pricetag.

Click here for online quote form and specs.

Call your BRL Test Representative to see just how easy and affordable parametric testing can be… 866-275-8378.


Happy Friday from BRL Test!!!!

Happy Friday from BRL Test

Image  —  Posted: June 27, 2014 in Test Equipment
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At BRL Test we know the impartance of a good calibration kit when it comes to calibration.  Call your BRL Test Representative today at 407-682-4228 for cal kits.  Click here to get an online quote for the R11644A.

The Agilent R11644A calibration kit contains the precision mechanical standards required to calibrate the systematic errors of Agilent network analyzers. This calibration kit has a precision airline for performing the Thru-Reflect-Line (TRL) calibration, the most accurate error-correction technique for coaxial measurements. This kit also contains a flush short circuit, a precision shim, and a fixed termination.